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IS7000
HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR
2.54
Dimensions in mm
1 2 4 3
DESCRIPTION The IS7000 is an optically coupled isolator consisting of infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a space efficient, end-stackable 4 pin dual in line plastic package. FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l High Current Transfer Ratio ( 1000% min) l High BVCEO ( 300V min. ) APPLICATIONS l Modems l Copiers, facsimiles l Numerical control machines l Signal transmission between systems of different potentials and impedances
7.0 6.0 1.2 5.08 4.08
7.62 4.0 3.0 0.5 13 Max 0.26
3.0 0.5 3.35
ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current IC Power Dissipation 300V 0.1V 150mA 150mW 50mA 6V 70mW
OPTION SM
SURFACE MOUNT
OPTION G
7.62
POWER DISSIPATION Total Power Dissipation 200mW
0.6 0.1 10.46 9.86
1.25 0.75
0.26 10.16
ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581
7/12/00
ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com
DB92463m-AAS/A1
ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) Collector-emitter Breakdown (BVCEO ) Emitter-collector Breakdown (BVECO ) Collector-emitter Dark Current (ICEO ) MIN TYP MAX UNITS 1.2 4 10 300 0.1 200 1.4 V V A V V nA TEST CONDITION IF = 10mA IR = 10A VR = 4V IC = 0.1mA ( note 2 ) IE = 0.1mA VCE = 200V
Output
Coupled
Current Transfer Ratio (CTR) Collector-emitter Saturation VoltageVCE(SAT)
1000
4000 1.2
% V
1mA IF , 2V VCE 20mA IF , 100mA IC
Input to Output Isolation Voltage VISO
5300 7500
VRMS VPK
See note 1 See note 1 VIO = 500V (note 1) VCC = 10V, IC= 10mA, RL = 100
Input-output Isolation Resistance RISO 5x1010 Output Rise Time Output Fall Time Turn-on Time Turn-off Time Note 1 Note 2 tr tf ton toff 40 15 50 15
s s s s
Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory.
7/12/00
DB92463m-AAS/A1
Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation P C (mW) 140 150 Collector current I C (mA) 120 100 80 60
Collector Current vs. Collector-emitter Voltage 10mA 4mA
2mA
100
1mA 40 20 IF = 0.5mA 0 0.4 0.8 1.2 1.6 2.0
50
0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 60 Relative current transfer ratio 50 Forward current I F (mA) 40 30 20 10 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature
0 Collector-emitter voltage VCE ( V ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 IF = 1mA VCE= 2V
1.0
0.5
0 -30 0 25 50 75 Ambient temperature TA ( C ) Collector Dark Current vs. Ambient Temperature 10-5 Collector dark current I CEO (A) VCE= 200V 100
CE(SAT)
(V) Collector-emitter saturation voltage V 1.2 1.0 0.8 0.6 0.4 0.2 0 -30
10-6 10-7 10-8 10-9 10-10 10-11
IF = 20mA IC = 100mA
0
25
50
75
100
-30
0
25
50
75
100
Ambient temperature TA ( C )
7/12/00
Ambient temperature TA ( C )
DB92463m-AAS/A1

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